Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching [[electronic resource] /] / Fred Semendy, Phillip Boyd, and Unchul Lee
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| Autore: |
Semendy Fred
|
| Titolo: |
Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching [[electronic resource] /] / Fred Semendy, Phillip Boyd, and Unchul Lee
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| Pubblicazione: | Adelphi, MD : , : Army Research Laboratory, , [2004] |
| Descrizione fisica: | 1 online resource (iv, 15 pages) : illustrations (chiefly color), color charts |
| Soggetto topico: | Plasma etching |
| Gallium nitride | |
| Altri autori: |
BoydPhillip
LeeUnchul
|
| Note generali: | Title from PDF title screen (viewed on Aug. 10, 2010). |
| "November 2004." | |
| Nota di bibliografia: | Includes bibliographical references (pages 11-12). |
| Altri titoli varianti: | Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma |
| Titolo autorizzato: | Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910697103903321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |
Serie:
ARL-TR (Aberdeen Proving Ground, Md.) ; ; 3370.