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035   $a(OCoLC)74275409
035   $a(EXLCZ)995470000002385878
100   $a20080513d2004      ua             0
101 0 $aeng
135   $aurmn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aEtching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching$b[electronic resource] /$fFred Semendy, Phillip Boyd, and Unchul Lee
210  1$aAdelphi, MD :$cArmy Research Laboratory,$d[2004]
215   $a1 online resource (iv, 15 pages) $cillustrations (chiefly color), color charts
225 1 $aARL-TR ;$v3370
300   $aTitle from PDF title screen (viewed on Aug. 10, 2010).
300   $a"November 2004."
320   $aIncludes bibliographical references (pages 11-12).
410  0$aARL-TR (Aberdeen Proving Ground, Md.) ;$v3370.
517   $aEtching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma 
606   $aPlasma etching
606   $aGallium nitride
615  0$aPlasma etching.
615  0$aGallium nitride.
700   $aSemendy$b Fred$01386303
701   $aBoyd$b Phillip$01387553
701   $aLee$b Unchul$01387554
712 02$aU.S. Army Research Laboratory.
801  0$bDTICE
801  1$bDTICE
801  2$bGPO
906   $aBOOK
912   $a9910697103903321
996   $aEtching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride$93437521
997   $aUNINA