01878oam 2200445Ia 450 991069710390332120230902161933.0(CKB)5470000002385878(OCoLC)74275409(EXLCZ)99547000000238587820080513d2004 ua 0engurmn|||||||||txtrdacontentcrdamediacrrdacarrierEtching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching[electronic resource] /Fred Semendy, Phillip Boyd, and Unchul LeeAdelphi, MD :Army Research Laboratory,[2004]1 online resource (iv, 15 pages) illustrations (chiefly color), color chartsARL-TR ;3370Title from PDF title screen (viewed on Aug. 10, 2010)."November 2004."Includes bibliographical references (pages 11-12).ARL-TR (Aberdeen Proving Ground, Md.) ;3370.Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma Plasma etchingGallium nitridePlasma etching.Gallium nitride.Semendy Fred1386303Boyd Phillip1387553Lee Unchul1387554U.S. Army Research Laboratory.DTICEDTICEGPOBOOK9910697103903321Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride3437521UNINA