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Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching
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Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride
ID:
3437521
Creatori:
(1386303) Semendy, Fred
...
(1387553) Boyd Phillip
...
(1387554) Lee, Unchul
...
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