Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes / / C.M. Schnabel [and six others]

• Autore: Schnabel C. M.
• Pubblicazione: Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , February 2000
• Descrizione fisica: 1 online resource (4 pages) : illustrations
• Soggetto topico: Correlation; Synchrotrons; Topography; Beam currents; Electron beams; Schottky diodes; Crystal defects
• Note generali: "February 2000."; "Prepared for the 1999 International Conference on Silicon Carbide and Related Materials sponsored by North Carolina State University, Raleigh, North Carolina, October 10-15, 1999."; "Performing organization: National Aeronautics and Space Administration, John H. Glenn Research Center at Lewis Field"--Report documentation page.
• Nota di bibliografia: Includes bibliographical references (page 4).
• Altri titoli varianti: Correlation of electron-beam-induced current and synchrotron white-beam X-ray topography imaged defects and epilayer growth pits in 6H-SiC Schottky diodes
• Titolo autorizzato: Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910706231503321
• Lo trovi qui: Univ. Federico II