02270oam 2200577I 450 991070623150332120171025104341.0(CKB)5470000002456124(OCoLC)858263039(EXLCZ)99547000000245612420130912j200002 ua 0engurbn||||a|a||txtrdacontentcrdamediacrrdacarrierCorrelation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes /C.M. Schnabel [and six others]Cleveland, Ohio :National Aeronautics and Space Administration, Glenn Research Center,February 2000.1 online resource (4 pages) illustrationsNASA/TM ;2000-209648"February 2000.""Prepared for the 1999 International Conference on Silicon Carbide and Related Materials sponsored by North Carolina State University, Raleigh, North Carolina, October 10-15, 1999.""Performing organization: National Aeronautics and Space Administration, John H. Glenn Research Center at Lewis Field"--Report documentation page.Includes bibliographical references (page 4).Correlation of electron-beam-induced current and synchrotron white-beam X-ray topography imaged defects and epilayer growth pits in 6H-SiC Schottky diodesCorrelationnasatSynchrotronsnasatTopographynasatBeam currentsnasatElectron beamsnasatSchottky diodesnasatCrystal defectsnasatCorrelation.Synchrotrons.Topography.Beam currents.Electron beams.Schottky diodes.Crystal defects.Schnabel C. M.1403200NASA Glenn Research Center,OCLCEOCLCEOCLCOOCLCFOCLCQGPOBOOK9910706231503321Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes3475353UNINA