LEADER 02270oam  2200577I  450 
001 9910706231503321
005 20171025104341.0
035   $a(CKB)5470000002456124
035   $a(OCoLC)858263039
035   $a(EXLCZ)995470000002456124
100   $a20130912j200002    ua             0
101 0 $aeng
135   $aurbn||||a|a||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aCorrelation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes /$fC.M. Schnabel [and six others]
210  1$aCleveland, Ohio :$cNational Aeronautics and Space Administration, Glenn Research Center,$dFebruary 2000.
215   $a1 online resource (4 pages) $cillustrations
225 1 $aNASA/TM ;$v2000-209648
300   $a"February 2000."
300   $a"Prepared for the 1999 International Conference on Silicon Carbide and Related Materials sponsored by North Carolina State University, Raleigh, North Carolina, October 10-15, 1999."
300   $a"Performing organization: National Aeronautics and Space Administration, John H. Glenn Research Center at Lewis Field"--Report documentation page.
320   $aIncludes bibliographical references (page 4).
517 3 $aCorrelation of electron-beam-induced current and synchrotron white-beam X-ray topography imaged defects and epilayer growth pits in 6H-SiC Schottky diodes
606   $aCorrelation$2nasat
606   $aSynchrotrons$2nasat
606   $aTopography$2nasat
606   $aBeam currents$2nasat
606   $aElectron beams$2nasat
606   $aSchottky diodes$2nasat
606   $aCrystal defects$2nasat
615  7$aCorrelation.
615  7$aSynchrotrons.
615  7$aTopography.
615  7$aBeam currents.
615  7$aElectron beams.
615  7$aSchottky diodes.
615  7$aCrystal defects.
700   $aSchnabel$b C. M.$01403200
712 02$aNASA Glenn Research Center,
801  0$bOCLCE
801  1$bOCLCE
801  2$bOCLCO
801  2$bOCLCF
801  2$bOCLCQ
801  2$bGPO
906   $aBOOK
912   $a9910706231503321
996   $aCorrelation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes$93475353
997   $aUNINA