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Record Nr. |
UNINA9910706231503321 |
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Autore |
Schnabel C. M. |
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Titolo |
Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes / / C.M. Schnabel [and six others] |
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Pubbl/distr/stampa |
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Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , February 2000 |
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Descrizione fisica |
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1 online resource (4 pages) : illustrations |
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Collana |
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Soggetti |
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Correlation |
Synchrotrons |
Topography |
Beam currents |
Electron beams |
Schottky diodes |
Crystal defects |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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"February 2000." |
"Prepared for the 1999 International Conference on Silicon Carbide and Related Materials sponsored by North Carolina State University, Raleigh, North Carolina, October 10-15, 1999." |
"Performing organization: National Aeronautics and Space Administration, John H. Glenn Research Center at Lewis Field"--Report documentation page. |
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Nota di bibliografia |
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Includes bibliographical references (page 4). |
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