High-bandwidth memory interface / / Chulwoo Kim, Hyun-Woo Lee, Junyoung Song

• Autore: Kim Chulwoo
• Pubblicazione: New York : , : Springer, , 2014
• Edizione: 1st ed. 2014.
• Descrizione fisica: 1 online resource (viii, 88 pages) : illustrations (some color)
• Disciplina: 621.398
• Soggetto topico: Computer storage devices
• Persona (resp. second.): LeeHyun-Woo; SongJunyoung
• Note generali: "ISSN: 2191-8112."
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: An introduction to high-speed DRAM -- An I/O Line Configuration and Organization of DRAM -- Clock generation and distribution -- Transceiver Design -- TSV Interface for DRAM.
• Sommario/riassunto: This book provides an overview of recent advances in memory interface design at both the architecture and circuit levels. Coverage includes signal integrity and testing, TSV interface, high-speed serial interface including equalization, ODT, pre-emphasis, wide I/O interface including crosstalk, skew cancellation, and clock generation and distribution. Trends for further bandwidth enhancement are also covered. • Enables readers with minimal background in memory design to understand the basics of high-bandwidth memory interface design; • Presents state-of-the-art techniques for memory interface design; • Covers memory interface design at both the circuit level and system architecture level.
• Titolo autorizzato: High-Bandwidth Memory Interface
• ISBN: 3-319-02381-0
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910299470203321
• Lo trovi qui: Univ. Federico II
• Serie: SpringerBriefs in electrical and computer engineering.