1.

Record Nr.

UNINA9910299470203321

Autore

Kim Chulwoo

Titolo

High-bandwidth memory interface / / Chulwoo Kim, Hyun-Woo Lee, Junyoung Song

Pubbl/distr/stampa

New York : , : Springer, , 2014

ISBN

3-319-02381-0

Edizione

[1st ed. 2014.]

Descrizione fisica

1 online resource (viii, 88 pages) : illustrations (some color)

Collana

SpringerBriefs in Electrical and Computer Engineering, , 2191-8112

Disciplina

621.398

Soggetti

Computer storage devices

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Monografia

Note generali

"ISSN: 2191-8112."

Nota di bibliografia

Includes bibliographical references and index.

Nota di contenuto

An introduction to high-speed DRAM -- An I/O Line Configuration and Organization of DRAM -- Clock generation and distribution -- Transceiver Design -- TSV Interface for DRAM.

Sommario/riassunto

This book provides an overview of recent advances in memory interface design at both the architecture and circuit levels. Coverage includes signal integrity and testing, TSV interface, high-speed serial interface including equalization, ODT, pre-emphasis, wide I/O interface including crosstalk, skew cancellation, and clock generation and distribution. Trends for further bandwidth enhancement are also covered.   • Enables readers with minimal background in memory design to understand the basics of high-bandwidth memory interface design; • Presents state-of-the-art techniques for memory interface design; • Covers memory interface design at both the circuit level and system architecture level.