02304oam 2200457 450 991029947020332120190911112725.03-319-02381-010.1007/978-3-319-02381-6(OCoLC)864755537(MiFhGG)GVRL6YEK(EXLCZ)99255000000115282820130918d2014 uy 0engurun|---uuuuatxtccrHigh-bandwidth memory interface /Chulwoo Kim, Hyun-Woo Lee, Junyoung Song1st ed. 2014.New York :Springer,2014.1 online resource (viii, 88 pages) illustrations (some color)SpringerBriefs in Electrical and Computer Engineering,2191-8112"ISSN: 2191-8112."3-319-02380-2 Includes bibliographical references and index.An introduction to high-speed DRAM -- An I/O Line Configuration and Organization of DRAM -- Clock generation and distribution -- Transceiver Design -- TSV Interface for DRAM.This book provides an overview of recent advances in memory interface design at both the architecture and circuit levels. Coverage includes signal integrity and testing, TSV interface, high-speed serial interface including equalization, ODT, pre-emphasis, wide I/O interface including crosstalk, skew cancellation, and clock generation and distribution. Trends for further bandwidth enhancement are also covered.   • Enables readers with minimal background in memory design to understand the basics of high-bandwidth memory interface design; • Presents state-of-the-art techniques for memory interface design; • Covers memory interface design at both the circuit level and system architecture level.SpringerBriefs in electrical and computer engineering.Computer storage devicesComputer storage devices.621.398Kim Chulwooauthttp://id.loc.gov/vocabulary/relators/aut873959Lee Hyun-WooSong JunyoungMiFhGGMiFhGGBOOK9910299470203321High-Bandwidth Memory Interface1951212UNINA