Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) / / Jon C. Freeman
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| Autore: |
Freeman Jon C.
|
| Titolo: |
Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) / / Jon C. Freeman
|
| Pubblicazione: | Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , February 2003 |
| Descrizione fisica: | 1 online resource (65 pages) : illustrations |
| Soggetto topico: | Gallium nitrides |
| Field effect transistors | |
| High electron mobility transistors | |
| Note generali: | "February 2003." |
| "Performing organization: National Aeronautics and Space Administration, John H. Glenn Research Center at Lewis Field" Report documentation page. | |
| Nota di bibliografia: | Includes bibliographical references (pages 62-65). |
| Altri titoli varianti: | Basic equations for the modeling of gallium nitride |
| Titolo autorizzato: | Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910705626303321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |