01679nam 2200421 450 991070562630332120170908152619.0(CKB)5470000002452136(OCoLC)988028658(EXLCZ)99547000000245213620170525j200302 ua 0engurbn|||||||||txtrdacontentcrdamediacrrdacarrierBasic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) /Jon C. FreemanCleveland, Ohio :National Aeronautics and Space Administration, Glenn Research Center,February 2003.1 online resource (65 pages) illustrationsNASA/TM ;2003-211983"February 2003.""Performing organization: National Aeronautics and Space Administration, John H. Glenn Research Center at Lewis Field" Report documentation page.Includes bibliographical references (pages 62-65).Basic equations for the modeling of gallium nitride Gallium nitridesnasatField effect transistorsnasatHigh electron mobility transistorsnasatGallium nitrides.Field effect transistors.High electron mobility transistors.Freeman Jon C.1402341NASA Glenn Research Center,GPOGPOBOOK9910705626303321Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs)3537876UNINA