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100   $a20170525j200302    ua             0
101 0 $aeng
135   $aurbn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aBasic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) /$fJon C. Freeman
210  1$aCleveland, Ohio :$cNational Aeronautics and Space Administration, Glenn Research Center,$dFebruary 2003.
215   $a1 online resource (65 pages) $cillustrations
225 1 $aNASA/TM ;$v2003-211983
300   $a"February 2003."
300   $a"Performing organization: National Aeronautics and Space Administration, John H. Glenn Research Center at Lewis Field" Report documentation page.
320   $aIncludes bibliographical references (pages 62-65).
517   $aBasic equations for the modeling of gallium nitride 
606   $aGallium nitrides$2nasat
606   $aField effect transistors$2nasat
606   $aHigh electron mobility transistors$2nasat
615  7$aGallium nitrides.
615  7$aField effect transistors.
615  7$aHigh electron mobility transistors.
700   $aFreeman$b Jon C.$01402341
712 02$aNASA Glenn Research Center,
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910705626303321
996   $aBasic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs)$93537876
997   $aUNINA