Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) / / Jon C. Freeman

• Record Nr.: UNINA9910705626303321
• Autore: Freeman Jon C.
• Pubbl/distr/stampa: Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , February 2003
• Descrizione fisica: 1 online resource (65 pages) : illustrations
• Collana: NASA/TM ; ; 2003-211983
• Soggetti: Gallium nitrides; Field effect transistors; High electron mobility transistors
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Note generali: "February 2003."; "Performing organization: National Aeronautics and Space Administration, John H. Glenn Research Center at Lewis Field" Report documentation page.
• Nota di bibliografia: Includes bibliographical references (pages 62-65).