Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond : Doctoral Thesis accepted by Chinese Academy of Sciences, Beijing, China / Guilei Wang
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| Autore: |
Wang, Guilei
|
| Titolo: |
Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond : Doctoral Thesis accepted by Chinese Academy of Sciences, Beijing, China / Guilei Wang
|
| Pubblicazione: | Singapore, : Springer, 2019 |
| Titolo uniforme: | Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond |
| Descrizione fisica: | xvi, 115 p. : ill. ; 24 cm |
| Soggetto topico: | 00A79 (77-XX) - Physics [MSC 2020] |
| Soggetto non controllato: | Pattern dependency |
| RPCVD | |
| Selective epitaxy | |
| SiGe | |
| Source/drain technology | |
| Strain | |
| Technology nodes | |
| Titolo autorizzato: | Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | VAN00219614 |
| Lo trovi qui: | Univ. Vanvitelli |
| Localizzazioni e accesso elettronico | http://doi.org/10.1007/978-981-15-0046-6 |
| Opac: | Controlla la disponibilità qui |
Serie:
Springer theses : recognizing outstanding Ph.D. research Berlin . -Springer , 2010-