LEADER 01924nam0 22003973i 450 001 VAN00219614 005 20240806101255.287 017 70$2N$a9789811500466 100 $a20210930d2019 |0itac50 ba 101 $aeng 102 $aSG 105 $a|||| ||||| 200 1 $aInvestigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond$eDoctoral Thesis accepted by Chinese Academy of Sciences, Beijing, China$fGuilei Wang 210 $aSingapore$cSpringer$d2019 215 $axvi, 115 p.$cill.$d24 cm 410 1$1001VAN00104193$12001 $aSpringer theses$erecognizing outstanding Ph.D. research$1210 $aBerlin$cSpringer$d2010- 500 1$3VAN00219620$aInvestigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond$91873375 606 $a00A79 (77-XX)$xPhysics [MSC 2020]$3VANC023182$2MF 610 $aPattern dependency$9KW:K 610 $aRPCVD$9KW:K 610 $aSelective epitaxy$9KW:K 610 $aSiGe$9KW:K 610 $aSource/drain technology$9KW:K 610 $aStrain$9KW:K 610 $aTechnology nodes$9KW:K 620 $aSG$dSingapore$3VANL000061 700 1$aWang$bGuilei$3VANV186560$0838756 712 $aSpringer $3VANV108073$4650 801 $aIT$bSOL$c20241115$gRICA 856 4 $uhttp://doi.org/10.1007/978-981-15-0046-6$zE-book ? Accesso al full-text attraverso riconoscimento IP di Ateneo, proxy e/o Shibboleth 899 $aBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA$1IT-CE0120$2VAN08 912 $fN 912 $aVAN00219614 950 $aBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA$d08DLOAD e-book 4097 $e08eMF4097 20210930 996 $aInvestigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond$91873375 997 $aUNICAMPANIA