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Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond
Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond Doctoral Thesis accepted by Chinese Academy of Sciences, Beijing, China
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Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond
ID:
1873375
Creatori:
(838756) Wang Guilei
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