The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices [[electronic resource] /] / by Zhiqiang Li

• Autore: Li Zhiqiang
• Pubblicazione: Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2016
• Edizione: 1st ed. 2016.
• Descrizione fisica: 1 online resource (71 p.)
• Disciplina: 530
• Soggetto topico: Semiconductors; Electronic circuits; Nanoscale science; Nanoscience; Nanostructures; Solid state physics; Electronic Circuits and Devices; Nanoscale Science and Technology; Solid State Physics
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references.
• Nota di contenuto: Introduction -- Ge-based Schottky barrier height modulation technology -- Metal germanide technology -- Contact resistance of Ge-based devices -- Conclusions.
• Sommario/riassunto: This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
• Titolo autorizzato: The Source
• ISBN: 3-662-49683-6
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910254623803321
• Lo trovi qui: Univ. Federico II
• Serie: Springer Theses, Recognizing Outstanding Ph.D. Research, . 2190-5053