03515nam 22007215 450 991025462380332120200705020818.03-662-49683-610.1007/978-3-662-49683-1(CKB)3710000000621691(EBL)4458119(SSID)ssj0001654160(PQKBManifestationID)16432806(PQKBTitleCode)TC0001654160(PQKBWorkID)14982975(PQKB)10267961(DE-He213)978-3-662-49683-1(MiAaPQ)EBC4458119(PPN)192773119(EXLCZ)99371000000062169120160324d2016 u| 0engur|n|---|||||txtccrThe Source/Drain Engineering of Nanoscale Germanium-based MOS Devices /by Zhiqiang Li1st ed. 2016.Berlin, Heidelberg :Springer Berlin Heidelberg :Imprint: Springer,2016.1 online resource (71 p.)Springer Theses, Recognizing Outstanding Ph.D. Research,2190-5053Description based upon print version of record.3-662-49681-X Includes bibliographical references.Introduction -- Ge-based Schottky barrier height modulation technology -- Metal germanide technology -- Contact resistance of Ge-based devices -- Conclusions.This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.Springer Theses, Recognizing Outstanding Ph.D. Research,2190-5053SemiconductorsElectronic circuitsNanoscale scienceNanoscienceNanostructuresSolid state physicsSemiconductorshttps://scigraph.springernature.com/ontologies/product-market-codes/P25150Electronic Circuits and Deviceshttps://scigraph.springernature.com/ontologies/product-market-codes/P31010Nanoscale Science and Technologyhttps://scigraph.springernature.com/ontologies/product-market-codes/P25140Solid State Physicshttps://scigraph.springernature.com/ontologies/product-market-codes/P25013Semiconductors.Electronic circuits.Nanoscale science.Nanoscience.Nanostructures.Solid state physics.Semiconductors.Electronic Circuits and Devices.Nanoscale Science and Technology.Solid State Physics.530Li Zhiqiangauthttp://id.loc.gov/vocabulary/relators/aut767421BOOK9910254623803321The Source2533245UNINA