LEADER 02055nas 2200565 a 450 001 9910144566303321 005 20250616184429.0 011 $a1538-7305 035 $a(OCoLC)44653530 035 $a(CKB)954925608889 035 $a(CONSER) 2002213727 035 $a(DE-599)ZDB2004226-7 035 $a(EXLCZ)99954925608889 100 $a20000726a19969999 sy a 101 0 $aeng 135 $aurmn|||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aBell Labs technical journal 210 $a[Murray Hill, N.J.] $cLucent Technologies$dc1996- 300 $aOriginally titled Bell System Technical Journal from 1922-1983. Changed Title in 1983 to 1984 to AT&T Bell Laboratories Technical Journal and changed again in 1985 to AT&T Technical Journal until 1995. In 1996 changed title to Bell Labs Technical Journal. 300 $aTitle from issue table of contents (Wiley, viewed July 29, 2005). 300 $aPublished: Hoboken, N.J. : Lucent Technologies, Inc., published by Wiley Periodicals, Inc., <2005-> 300 $aRefereed/Peer-reviewed 311 08$a1089-7089 606 $aTelecommunication$vPeriodicals 606 $aElectronics$vPeriodicals 606 $aTe?le?communications$vPe?riodiques 606 $aE?lectronique$vPe?riodiques 606 $a53.70 telecommunications technology: general$2nbc 606 $aTelecomunicació$2thub 606 $aOrdinadors$2thub 606 $aEnginyeria elèctrica$2thub 608 $aRevistes electròniques$2thub 615 0$aTelecommunication 615 0$aElectronics 615 6$aTe?le?communications 615 6$aE?lectronique 615 $a53.70 telecommunications technology: general 615 7$aTelecomunicació 615 7$aOrdinadors 615 7$aEnginyeria elèctrica 676 $a621.382/05 712 02$aLucent Technologies (Firm) 712 02$aBell Labs. 906 $aJOURNAL 912 $a9910144566303321 996 $aBell Labs Technical Journal$9799527 997 $aUNINA LEADER 03503nam 22007215 450 001 9910254623803321 005 20200705020818.0 010 $a3-662-49683-6 024 7 $a10.1007/978-3-662-49683-1 035 $a(CKB)3710000000621691 035 $a(EBL)4458119 035 $a(SSID)ssj0001654160 035 $a(PQKBManifestationID)16432806 035 $a(PQKBTitleCode)TC0001654160 035 $a(PQKBWorkID)14982975 035 $a(PQKB)10267961 035 $a(DE-He213)978-3-662-49683-1 035 $a(MiAaPQ)EBC4458119 035 $a(PPN)192773119 035 $a(EXLCZ)993710000000621691 100 $a20160324d2016 u| 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 14$aThe Source/Drain Engineering of Nanoscale Germanium-based MOS Devices /$fby Zhiqiang Li 205 $a1st ed. 2016. 210 1$aBerlin, Heidelberg :$cSpringer Berlin Heidelberg :$cImprint: Springer,$d2016. 215 $a1 online resource (71 p.) 225 1 $aSpringer Theses, Recognizing Outstanding Ph.D. Research,$x2190-5053 300 $aDescription based upon print version of record. 311 $a3-662-49681-X 320 $aIncludes bibliographical references. 327 $aIntroduction -- Ge-based Schottky barrier height modulation technology -- Metal germanide technology -- Contact resistance of Ge-based devices -- Conclusions. 330 $aThis book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600? and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10?7??cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node. 410 0$aSpringer Theses, Recognizing Outstanding Ph.D. Research,$x2190-5053 606 $aSemiconductors 606 $aElectronic circuits 606 $aNanoscience 606 $aNanoscience 606 $aNanostructures 606 $aSolid state physics 606 $aSemiconductors$3https://scigraph.springernature.com/ontologies/product-market-codes/P25150 606 $aElectronic Circuits and Devices$3https://scigraph.springernature.com/ontologies/product-market-codes/P31010 606 $aNanoscale Science and Technology$3https://scigraph.springernature.com/ontologies/product-market-codes/P25140 606 $aSolid State Physics$3https://scigraph.springernature.com/ontologies/product-market-codes/P25013 615 0$aSemiconductors. 615 0$aElectronic circuits. 615 0$aNanoscience. 615 0$aNanoscience. 615 0$aNanostructures. 615 0$aSolid state physics. 615 14$aSemiconductors. 615 24$aElectronic Circuits and Devices. 615 24$aNanoscale Science and Technology. 615 24$aSolid State Physics. 676 $a530 700 $aLi$b Zhiqiang$4aut$4http://id.loc.gov/vocabulary/relators/aut$0767421 906 $aBOOK 912 $a9910254623803321 996 $aThe Source$92533245 997 $aUNINA