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010   $a3-662-49683-6
024 7 $a10.1007/978-3-662-49683-1
035   $a(CKB)3710000000621691
035   $a(EBL)4458119
035   $a(SSID)ssj0001654160
035   $a(PQKBManifestationID)16432806
035   $a(PQKBTitleCode)TC0001654160
035   $a(PQKBWorkID)14982975
035   $a(PQKB)10267961
035   $a(DE-He213)978-3-662-49683-1
035   $a(MiAaPQ)EBC4458119
035   $a(PPN)192773119
035   $a(EXLCZ)993710000000621691
100   $a20160324d2016      u|         0
101 0 $aeng
135   $aur|n|---|||||
181   $ctxt
182   $cc
183   $acr
200 14$aThe Source/Drain Engineering of Nanoscale Germanium-based MOS Devices /$fby Zhiqiang Li
205   $a1st ed. 2016.
210  1$aBerlin, Heidelberg :$cSpringer Berlin Heidelberg :$cImprint: Springer,$d2016.
215   $a1 online resource (71 p.)
225 1 $aSpringer Theses, Recognizing Outstanding Ph.D. Research,$x2190-5053
300   $aDescription based upon print version of record.
311   $a3-662-49681-X 
320   $aIncludes bibliographical references.
327   $aIntroduction -- Ge-based Schottky barrier height modulation technology -- Metal germanide technology -- Contact resistance of Ge-based devices -- Conclusions.
330   $aThis book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600? and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10?7??cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
410  0$aSpringer Theses, Recognizing Outstanding Ph.D. Research,$x2190-5053
606   $aSemiconductors
606   $aElectronic circuits
606   $aNanoscale science
606   $aNanoscience
606   $aNanostructures
606   $aSolid state physics
606   $aSemiconductors$3https://scigraph.springernature.com/ontologies/product-market-codes/P25150
606   $aElectronic Circuits and Devices$3https://scigraph.springernature.com/ontologies/product-market-codes/P31010
606   $aNanoscale Science and Technology$3https://scigraph.springernature.com/ontologies/product-market-codes/P25140
606   $aSolid State Physics$3https://scigraph.springernature.com/ontologies/product-market-codes/P25013
615  0$aSemiconductors.
615  0$aElectronic circuits.
615  0$aNanoscale science.
615  0$aNanoscience.
615  0$aNanostructures.
615  0$aSolid state physics.
615 14$aSemiconductors.
615 24$aElectronic Circuits and Devices.
615 24$aNanoscale Science and Technology.
615 24$aSolid State Physics.
676   $a530
700   $aLi$b Zhiqiang$4aut$4http://id.loc.gov/vocabulary/relators/aut$0767421
906   $aBOOK
912   $a9910254623803321
996   $aThe Source$92533245
997   $aUNINA