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[null,"1.","Record Nr.",null,"UNINA990000857740403321"]
[null,null,"Autore",null,"Meeting on unilateral problems in structural analysis : <4. ;  : 1989"]
[null,null,"Titolo",null,"Unilateral problems in structural analysis IV : proceedings of the fourth meeting on unilateral problems in structural analysis, Capri, june 14-16, 1989 / edited by G. Del Piero, F. Maceri"]
[null,null,"Pubbl/distr/stampa",null,"Basel : Birkhauser-Verlag, 1991"]
[null,null,"ISBN",null,"3-7643-2487-2"]
[null,null,"Descrizione fisica",null,"VII, 228 p. ; 24 cm"]
[null,null,"Collana",null,"International series of numerical mathematics = 0101"]
[null,null,"Disciplina",null,"624.171"]
[null,null,"Locazione",null,"FINBN"]
[null,null,"Collocazione",null,"02 68 D 21"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,"2.","Record Nr.",null,"UNINA9910254623803321"]
[null,null,"Autore",null,"Li Zhiqiang"]
[null,null,"Titolo",null,"The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices / / by Zhiqiang Li"]
[null,null,"Pubbl/distr/stampa",null,"Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2016"]
[null,null,"ISBN",null,"3-662-49683-6"]
[null,null,"Edizione",null,"[1st ed. 2016.]"]
[null,null,"Descrizione fisica",null,"1 online resource (71 p.)"]
[null,null,"Collana",null,"Springer Theses, Recognizing Outstanding Ph.D. Research, , 2190-5053"]
[null,null,"Disciplina",null,"530"]
[null,null,"Soggetti",null,"Semiconductors"]
[{"$nulls":4},"Electronic circuits"]
[{"$nulls":4},"Nanoscience"]
[{"$nulls":4},"Nanostructures"]
[{"$nulls":4},"Solid state physics"]
[{"$nulls":4},"Electronic Circuits and Devices"]
[{"$nulls":4},"Nanoscale Science and Technology"]
[{"$nulls":4},"Solid State Physics"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","Description based upon print version of record."]
[null,null,null,"Nota di bibliografia","Includes bibliographical references."]
[null,null,"Nota di contenuto",null,"Introduction -- Ge-based Schottky barrier height modulation technology -- Metal germanide technology -- Contact resistance of Ge-based devices -- Conclusions."]
[null,null,null,"Sommario/riassunto","This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node."]