Nanowire Field-Effect Transistor (FET)

• Autore: García-Loureiro Antonio
• Pubblicazione: Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
• Descrizione fisica: 1 online resource (96 p.)
• Soggetto topico: History of engineering and technology
• Soggetto non controllato: aspect ratio of channel cross-section; charge transport; CMOS circuit; conduction mechanism; constriction; Coulomb interaction; DC and AC characteristic fluctuations; device simulation; dimensionality reduction; drift-diffusion; electron-phonon interaction; fabrication; field effect transistor; gate-all-around; geometric correlations; heat equation; hot electrons; III-V; Integration; Kubo-Greenwood formalism; lowest order approximation; material properties; metal gate; modelling; Monte Carlo; MOSFETs; nano-cooling; nano-transistors; nanodevice; nanojunction; nanowire; nanowire field-effect transistors; nanowire transistor; noise margin fluctuation; non-equilibrium Green functions; nonequilibrium Green's function; one-dimensional multi-subband scattering models; Padé approximants; phonon-phonon interaction; power dissipation; power fluctuation; quantum confinement; quantum electron transport; quantum modeling; quantum transport; random dopant; Richardson extrapolation; Schrödinger based quantum corrections; schrödinger-poisson solvers; screening; self-consistent Born approximation; self-cooling; silicon nanomaterials; silicon nanowires; statistical device simulation; stochastic Schrödinger equations; TASE; thermoelectricity; timing fluctuation; variability; variability effects; work function fluctuation; ZnO
• Persona (resp. second.): KalnaKarol; SeoaneNatalia; García-LoureiroAntonio
• Sommario/riassunto: In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.
• Altri titoli varianti: Nanowire Field-Effect Transistor
• Titolo autorizzato: Nanowire Field-Effect Transistor (FET)
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910557553303321
• Lo trovi qui: Univ. Federico II