LEADER 04236nam 2201141z- 450 001 9910557553303321 005 20231214133057.0 035 $a(CKB)5400000000044073 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/68381 035 $a(EXLCZ)995400000000044073 100 $a20202105d2021 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aNanowire Field-Effect Transistor (FET) 210 $aBasel, Switzerland$cMDPI - Multidisciplinary Digital Publishing Institute$d2021 215 $a1 electronic resource (96 p.) 311 $a3-03936-208-9 311 $a3-03936-209-7 330 $aIn the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices. 517 $aNanowire Field-Effect Transistor 606 $aHistory of engineering & technology$2bicssc 610 $arandom dopant 610 $adrift-diffusion 610 $avariability 610 $adevice simulation 610 $ananodevice 610 $ascreening 610 $aCoulomb interaction 610 $aIII-V 610 $aTASE 610 $aMOSFETs 610 $aIntegration 610 $ananowire field-effect transistors 610 $asilicon nanomaterials 610 $acharge transport 610 $aone-dimensional multi-subband scattering models 610 $aKubo?Greenwood formalism 610 $aschrödinger-poisson solvers 610 $aDC and AC characteristic fluctuations 610 $agate-all-around 610 $ananowire 610 $awork function fluctuation 610 $aaspect ratio of channel cross-section 610 $atiming fluctuation 610 $anoise margin fluctuation 610 $apower fluctuation 610 $aCMOS circuit 610 $astatistical device simulation 610 $avariability effects 610 $aMonte Carlo 610 $aSchrödinger based quantum corrections 610 $aquantum modeling 610 $anonequilibrium Green?s function 610 $ananowire transistor 610 $aelectron?phonon interaction 610 $aphonon?phonon interaction 610 $aself-consistent Born approximation 610 $alowest order approximation 610 $aPadé approximants 610 $aRichardson extrapolation 610 $aZnO 610 $afield effect transistor 610 $aconduction mechanism 610 $ametal gate 610 $amaterial properties 610 $afabrication 610 $amodelling 610 $ananojunction 610 $aconstriction 610 $aquantum electron transport 610 $aquantum confinement 610 $adimensionality reduction 610 $astochastic Schrödinger equations 610 $ageometric correlations 610 $asilicon nanowires 610 $anano-transistors 610 $aquantum transport 610 $ahot electrons 610 $aself-cooling 610 $anano-cooling 610 $athermoelectricity 610 $aheat equation 610 $anon-equilibrium Green functions 610 $apower dissipation 615 7$aHistory of engineering & technology 700 $aGarcía-Loureiro$b Antonio$4edt$01293633 702 $aKalna$b Karol$4edt 702 $aSeoane$b Natalia$4edt 702 $aGarcía-Loureiro$b Antonio$4oth 702 $aKalna$b Karol$4oth 702 $aSeoane$b Natalia$4oth 906 $aBOOK 912 $a9910557553303321 996 $aNanowire Field-Effect Transistor (FET)$93022684 997 $aUNINA