LEADER 04253nam 2201153z- 450 001 9910557553303321 005 20210501 035 $a(CKB)5400000000044073 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/68381 035 $a(oapen)doab68381 035 $a(EXLCZ)995400000000044073 100 $a20202105d2021 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 00$aNanowire Field-Effect Transistor (FET) 210 $aBasel, Switzerland$cMDPI - Multidisciplinary Digital Publishing Institute$d2021 215 $a1 online resource (96 p.) 311 08$a3-03936-208-9 311 08$a3-03936-209-7 330 $aIn the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices. 517 $aNanowire Field-Effect Transistor 606 $aHistory of engineering and technology$2bicssc 610 $aaspect ratio of channel cross-section 610 $acharge transport 610 $aCMOS circuit 610 $aconduction mechanism 610 $aconstriction 610 $aCoulomb interaction 610 $aDC and AC characteristic fluctuations 610 $adevice simulation 610 $adimensionality reduction 610 $adrift-diffusion 610 $aelectron-phonon interaction 610 $afabrication 610 $afield effect transistor 610 $agate-all-around 610 $ageometric correlations 610 $aheat equation 610 $ahot electrons 610 $aIII-V 610 $aIntegration 610 $aKubo-Greenwood formalism 610 $alowest order approximation 610 $amaterial properties 610 $ametal gate 610 $amodelling 610 $aMonte Carlo 610 $aMOSFETs 610 $anano-cooling 610 $anano-transistors 610 $ananodevice 610 $ananojunction 610 $ananowire 610 $ananowire field-effect transistors 610 $ananowire transistor 610 $anoise margin fluctuation 610 $anon-equilibrium Green functions 610 $anonequilibrium Green's function 610 $aone-dimensional multi-subband scattering models 610 $aPade? approximants 610 $aphonon-phonon interaction 610 $apower dissipation 610 $apower fluctuation 610 $aquantum confinement 610 $aquantum electron transport 610 $aquantum modeling 610 $aquantum transport 610 $arandom dopant 610 $aRichardson extrapolation 610 $aSchro?dinger based quantum corrections 610 $aschro?dinger-poisson solvers 610 $ascreening 610 $aself-consistent Born approximation 610 $aself-cooling 610 $asilicon nanomaterials 610 $asilicon nanowires 610 $astatistical device simulation 610 $astochastic Schro?dinger equations 610 $aTASE 610 $athermoelectricity 610 $atiming fluctuation 610 $avariability 610 $avariability effects 610 $awork function fluctuation 610 $aZnO 615 7$aHistory of engineering and technology 700 $aGarcía-Loureiro$b Antonio$4edt$01293633 702 $aKalna$b Karol$4edt 702 $aSeoane$b Natalia$4edt 702 $aGarcía-Loureiro$b Antonio$4oth 702 $aKalna$b Karol$4oth 702 $aSeoane$b Natalia$4oth 906 $aBOOK 912 $a9910557553303321 996 $aNanowire Field-Effect Transistor (FET)$93022684 997 $aUNINA