04253nam 2201153z- 450 991055755330332120210501(CKB)5400000000044073(oapen)https://directory.doabooks.org/handle/20.500.12854/68381(oapen)doab68381(EXLCZ)99540000000004407320202105d2021 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierNanowire Field-Effect Transistor (FET)Basel, SwitzerlandMDPI - Multidisciplinary Digital Publishing Institute20211 online resource (96 p.)3-03936-208-9 3-03936-209-7 In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.Nanowire Field-Effect Transistor History of engineering and technologybicsscaspect ratio of channel cross-sectioncharge transportCMOS circuitconduction mechanismconstrictionCoulomb interactionDC and AC characteristic fluctuationsdevice simulationdimensionality reductiondrift-diffusionelectron-phonon interactionfabricationfield effect transistorgate-all-aroundgeometric correlationsheat equationhot electronsIII-VIntegrationKubo-Greenwood formalismlowest order approximationmaterial propertiesmetal gatemodellingMonte CarloMOSFETsnano-coolingnano-transistorsnanodevicenanojunctionnanowirenanowire field-effect transistorsnanowire transistornoise margin fluctuationnon-equilibrium Green functionsnonequilibrium Green's functionone-dimensional multi-subband scattering modelsPadé approximantsphonon-phonon interactionpower dissipationpower fluctuationquantum confinementquantum electron transportquantum modelingquantum transportrandom dopantRichardson extrapolationSchrödinger based quantum correctionsschrödinger-poisson solversscreeningself-consistent Born approximationself-coolingsilicon nanomaterialssilicon nanowiresstatistical device simulationstochastic Schrödinger equationsTASEthermoelectricitytiming fluctuationvariabilityvariability effectswork function fluctuationZnOHistory of engineering and technologyGarcía-Loureiro Antonioedt1293633Kalna KaroledtSeoane NataliaedtGarcía-Loureiro AntonioothKalna KarolothSeoane NataliaothBOOK9910557553303321Nanowire Field-Effect Transistor (FET)3022684UNINA