04236nam 2201141z- 450 991055755330332120231214133057.0(CKB)5400000000044073(oapen)https://directory.doabooks.org/handle/20.500.12854/68381(EXLCZ)99540000000004407320202105d2021 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierNanowire Field-Effect Transistor (FET)Basel, SwitzerlandMDPI - Multidisciplinary Digital Publishing Institute20211 electronic resource (96 p.)3-03936-208-9 3-03936-209-7 In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.Nanowire Field-Effect Transistor History of engineering & technologybicsscrandom dopantdrift-diffusionvariabilitydevice simulationnanodevicescreeningCoulomb interactionIII-VTASEMOSFETsIntegrationnanowire field-effect transistorssilicon nanomaterialscharge transportone-dimensional multi-subband scattering modelsKubo–Greenwood formalismschrödinger-poisson solversDC and AC characteristic fluctuationsgate-all-aroundnanowirework function fluctuationaspect ratio of channel cross-sectiontiming fluctuationnoise margin fluctuationpower fluctuationCMOS circuitstatistical device simulationvariability effectsMonte CarloSchrödinger based quantum correctionsquantum modelingnonequilibrium Green’s functionnanowire transistorelectron–phonon interactionphonon–phonon interactionself-consistent Born approximationlowest order approximationPadé approximantsRichardson extrapolationZnOfield effect transistorconduction mechanismmetal gatematerial propertiesfabricationmodellingnanojunctionconstrictionquantum electron transportquantum confinementdimensionality reductionstochastic Schrödinger equationsgeometric correlationssilicon nanowiresnano-transistorsquantum transporthot electronsself-coolingnano-coolingthermoelectricityheat equationnon-equilibrium Green functionspower dissipationHistory of engineering & technologyGarcía-Loureiro Antonioedt1293633Kalna KaroledtSeoane NataliaedtGarcía-Loureiro AntonioothKalna KarolothSeoane NataliaothBOOK9910557553303321Nanowire Field-Effect Transistor (FET)3022684UNINA