00865nam a22002531i 450099100154802970753620031120201419.0040407s1972 it a||||||||||||||||ita b12787024-39ule_instARCHE-076665ExLDip.to Scienze StoricheitaA.t.i. Arché s.c.r.l. Pandora Sicilia s.r.l.701Agnetti, Vincenzo484620Tesi /Vincenzo AgnettiMilano :G. Prearo,[1972]1 v., [44] c. :ill. ;24 cmPrearianaArteTeorie.b1278702402-04-1416-04-04991001548029707536LE009 LA MON A 312009000119468le009-E0.00-l- 01010.i1333166816-04-04Tesi293091UNISALENTOle00916-04-04ma -itait 0101509nam a2200373 i 4500991003847089707536080807s2008 riua b 100 0 eng d97808218428500821842854b13760233-39ule_instDip.to Matematicaeng512.4422AMS 00B25AMS 16-06AMS 17-06AMS 20-06LC QA251.3.N665Noncommutative rings, group rings, diagram algebras, and their applications :international conference, December 18-22, 2006, University of Madras, Chennai, India /S. K. Jain, S. Parvathi, editors ; with the cooperation of Dinesh KhuranaProvidence, R. I. :American Mathematical Society,c2008viii, 230 p. :ill. ;26 cmContemporary mathematics,0271-4132 ;456Includes bibliographical referencesCommutative ringsCongressesGroup ringsCongressesJain, Surender KumarParvathi, S.Khurana, DineshRamanujan Institute.b1376023328-01-1407-08-08991003847089707536LE013 16-XX JAI11 (2008)12013000208855le013pE47.91-l- 00000.i1484735802-10-08Noncommutative rings, group rings, diagram algebras, and their applications718452UNISALENTOle01307-08-08ma -engriu0000980nam a22002771i 450099100162807970753620040115195140.0040407s1952 it a||||||||||||||||ita b12799233-39ule_instARCHE-077886ExLDip.to Scienze StoricheitaA.t.i. Arché s.c.r.l. Pandora Sicilia s.r.l.759.5Rosa, Gilda211918Zuccarelli /G. Rosa[2. ed. riv. ed.aum.]Milano :Görlich,195274 p. :ill. ;30 cmZuccarelli, FrancescoOperePitturaItaliaSec. 19.Zuccarelli, Francesco.b1279923302-04-1416-04-04991001628079707536LE009 LA VIII L 14 (Fondo Bottari)1LE009A-1742 LAle009-E0.00-no 00000.i1334580116-04-04Zuccarelli293858UNISALENTOle00916-04-04ma -itait 0104253nam 2201153z- 450 991055755330332120210501(CKB)5400000000044073(oapen)https://directory.doabooks.org/handle/20.500.12854/68381(oapen)doab68381(EXLCZ)99540000000004407320202105d2021 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierNanowire Field-Effect Transistor (FET)Basel, SwitzerlandMDPI - Multidisciplinary Digital Publishing Institute20211 online resource (96 p.)3-03936-208-9 3-03936-209-7 In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.Nanowire Field-Effect Transistor History of engineering and technologybicsscaspect ratio of channel cross-sectioncharge transportCMOS circuitconduction mechanismconstrictionCoulomb interactionDC and AC characteristic fluctuationsdevice simulationdimensionality reductiondrift-diffusionelectron-phonon interactionfabricationfield effect transistorgate-all-aroundgeometric correlationsheat equationhot electronsIII-VIntegrationKubo-Greenwood formalismlowest order approximationmaterial propertiesmetal gatemodellingMonte CarloMOSFETsnano-coolingnano-transistorsnanodevicenanojunctionnanowirenanowire field-effect transistorsnanowire transistornoise margin fluctuationnon-equilibrium Green functionsnonequilibrium Green's functionone-dimensional multi-subband scattering modelsPadé approximantsphonon-phonon interactionpower dissipationpower fluctuationquantum confinementquantum electron transportquantum modelingquantum transportrandom dopantRichardson extrapolationSchrödinger based quantum correctionsschrödinger-poisson solversscreeningself-consistent Born approximationself-coolingsilicon nanomaterialssilicon nanowiresstatistical device simulationstochastic Schrödinger equationsTASEthermoelectricitytiming fluctuationvariabilityvariability effectswork function fluctuationZnOHistory of engineering and technologyGarcía-Loureiro Antonioedt1293633Kalna KaroledtSeoane NataliaedtGarcía-Loureiro AntonioothKalna KarolothSeoane NataliaothBOOK9910557553303321Nanowire Field-Effect Transistor (FET)3022684UNINA