Defects of Solid Semiconductor Structures

• Autore: Riccio Michele
• Pubblicazione: Zurich : , : Trans Tech Publications, Limited, , 2024; ©2024
• Edizione: 1st ed.
• Descrizione fisica: 1 online resource (179 pages)
• Soggetto topico: Defects; Silicon carbide
• Altri autori: IraceAndrea BreglioGiovanni
• Nota di contenuto: Intro -- Defects of Solid Semiconductor Structures -- Preface -- Table of Contents -- Evaluation of Basal Plane Dislocation Behavior near Epilayer and Substrate Interface -- Body Diode Reliability of 4H-SiC MOSFETs as a Function of Epitaxial Process Parameter -- Accuracy of EVC Method for the PiN Diode Pattern on SiC Epi-Wafer -- Study on Quantification of Correlation between Current Density and UV Irradiation Intensity, Leading to Bar Shaped 1SSF Expansion -- Early Detection of Bar-Shaped 1SSF before Expansion by PL Imaging -- Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates -- Investigation of Dislocation Behaviors in 4H-SiC Substrate during Post-Growth Thermal Treatment -- The Role of Defects on SiC Device Performance and Ways to Mitigate them -- Emission of Trapped Electrons from the 4H-SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures -- SiC MOSFET Gate Oxide Quality Improvement Method in Furnace Thermal Oxidation with Lower Pressure Control -- Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth Using Synchrotron X-Ray Topography -- Crystal Originated Defect Monitoring and Reduction in Production Grade SmartSiC™ Engineered Substrates -- Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures -- Near-Interface Defect Decomposition during NO Annealing Analyzed by Molecular Dynamics Simulations -- Differences between Polar-Face and Non-Polar Face 4H-SiC/SiO2 Interfaces Revealed by Magnetic Resonance Spectroscopy -- Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs -- Epitaxial Defectivity Characterization Combining Surface Voltage and Photoluminescence Mapping on 200mm 4H-SiC Wafers. ; Buffer Layer Dependence of Defectivity in 200mm 4H-SiC Homoepitaxy -- A Study of Process Interruptions during Pre- and Post-Buffer Layer Epitaxial Growth for Defect Reduction in 4H SiC -- Practical Improvement of Noncontact Production Monitoring of Doping in SiC Wafers with Extended Epilayer Defects -- Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals -- Development of 3-Channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers Using Optical Inspection, Photoluminescence and X-Ray Topography -- High-Volume SiC Epitaxial Layer Manufacturing-Maintaining High Materials Quality of Lab Results in Production -- Non-Destructive Quantification of In-Plane Depth Distribution of Sub-Surface Damage on 4H-SiC Wafers Using Laser Light Scattering -- Macro Step Bunching/Debunching Engineering on 4° off 4H-SiC (0001) to Control the BPD-TED Conversion Ratio by Dynamic AGE-Ing® -- Charge Carrier Capture by Prominent Defect Centers in 4H-SiC -- Keyword Index -- Author Index.
• Sommario/riassunto: Special topic volume with invited peer-reviewed papers only.
• Titolo autorizzato: Defects of Solid Semiconductor Structures
• ISBN: 9783036416359; 3036416358
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9911006725003321
• Lo trovi qui: Univ. Federico II
• Serie: Diffusion and defect data : Pt. A, . -Defect and diffusion forum ; ; Volume 434