LEADER 04434nam 22005293 450 001 9911006725003321 005 20250609205036.0 010 $a9783036416359 010 $a3036416358 035 $a(MiAaPQ)EBC31648673 035 $a(Au-PeEL)EBL31648673 035 $a(CKB)34825778000041 035 $a(Exl-AI)31648673 035 $a(OCoLC)1455111090 035 $a(EXLCZ)9934825778000041 100 $a20240907d2024 uy 0 101 0 $aeng 135 $aurcnu|||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aDefects of Solid Semiconductor Structures 205 $a1st ed. 210 1$aZurich :$cTrans Tech Publications, Limited,$d2024. 210 4$d©2024. 215 $a1 online resource (179 pages) 225 1 $aDefect and Diffusion Forum,$x1662-9507 ;$vVolume 434 311 08$a9783036406350 311 08$a3036406352 327 $aIntro -- Defects of Solid Semiconductor Structures -- Preface -- Table of Contents -- Evaluation of Basal Plane Dislocation Behavior near Epilayer and Substrate Interface -- Body Diode Reliability of 4H-SiC MOSFETs as a Function of Epitaxial Process Parameter -- Accuracy of EVC Method for the PiN Diode Pattern on SiC Epi-Wafer -- Study on Quantification of Correlation between Current Density and UV Irradiation Intensity, Leading to Bar Shaped 1SSF Expansion -- Early Detection of Bar-Shaped 1SSF before Expansion by PL Imaging -- Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates -- Investigation of Dislocation Behaviors in 4H-SiC Substrate during Post-Growth Thermal Treatment -- The Role of Defects on SiC Device Performance and Ways to Mitigate them -- Emission of Trapped Electrons from the 4H-SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures -- SiC MOSFET Gate Oxide Quality Improvement Method in Furnace Thermal Oxidation with Lower Pressure Control -- Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth Using Synchrotron X-Ray Topography -- Crystal Originated Defect Monitoring and Reduction in Production Grade SmartSiC? Engineered Substrates -- Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures -- Near-Interface Defect Decomposition during NO Annealing Analyzed by Molecular Dynamics Simulations -- Differences between Polar-Face and Non-Polar Face 4H-SiC/SiO2 Interfaces Revealed by Magnetic Resonance Spectroscopy -- Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs -- Epitaxial Defectivity Characterization Combining Surface Voltage and Photoluminescence Mapping on 200mm 4H-SiC Wafers. 327 $aBuffer Layer Dependence of Defectivity in 200mm 4H-SiC Homoepitaxy -- A Study of Process Interruptions during Pre- and Post-Buffer Layer Epitaxial Growth for Defect Reduction in 4H SiC -- Practical Improvement of Noncontact Production Monitoring of Doping in SiC Wafers with Extended Epilayer Defects -- Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals -- Development of 3-Channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers Using Optical Inspection, Photoluminescence and X-Ray Topography -- High-Volume SiC Epitaxial Layer Manufacturing-Maintaining High Materials Quality of Lab Results in Production -- Non-Destructive Quantification of In-Plane Depth Distribution of Sub-Surface Damage on 4H-SiC Wafers Using Laser Light Scattering -- Macro Step Bunching/Debunching Engineering on 4° off 4H-SiC (0001) to Control the BPD-TED Conversion Ratio by Dynamic AGE-Ing® -- Charge Carrier Capture by Prominent Defect Centers in 4H-SiC -- Keyword Index -- Author Index. 330 $aSpecial topic volume with invited peer-reviewed papers only. 410 0$aDiffusion and defect data$nPt. A,$pDefect and diffusion forum ;$vVolume 434 606 $aDefects$7Generated by AI 606 $aSilicon carbide$7Generated by AI 615 0$aDefects 615 0$aSilicon carbide 700 $aRiccio$b Michele$01822804 701 $aIrace$b Andrea$0515880 701 $aBreglio$b Giovanni$01822805 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9911006725003321 996 $aDefects of Solid Semiconductor Structures$94389305 997 $aUNINA