Strain-Engineered MOSFETs / C. K. Maiti, T. K. Maiti

• Autore: Maiti C. K
• Pubblicazione: Boca Raton : , : CRC Press, , 2012
• Descrizione fisica: 1 online resource (1 p.)
• Soggetto topico: Technology & Engineering / Electronics / Microelectronics; Technology
• Persona (resp. second.): MaitiT. K
• Sommario/riassunto: This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization.
• Titolo autorizzato: Strain-Engineered MOSFETs
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910870868603321
• Lo trovi qui: Univ. Federico II