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100   $a20240202i20122020  uu 
101 0 $aeng
135   $aur|||||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 00$aStrain-Engineered MOSFETs$fC. K. Maiti, T. K. Maiti
210  1$aBoca Raton :$cCRC Press,$d2012.
215   $a1 online resource (1 p.)
311 08$a9781138075603 
330   $aThis book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization.
606   $aTechnology & Engineering / Electronics / Microelectronics$2bisacsh
606   $aTechnology
615  7$aTechnology & Engineering / Electronics / Microelectronics
615  0$aTechnology.
700   $aMaiti$b C. K$0866187
702   $aMaiti$b T. K
801  0$bScCtBLL
801  1$bScCtBLL
912   $a9910870868603321
996   $aStrain-Engineered MOSFETs$94191418
997   $aUNINA