01665nam 22003613a 450 991087086860332120240202165330.0(CKB)32612667900041(ScCtBLL)152c51d6-f4bf-4cd5-a024-68e55668e9c3(Perlego)2330316(EXLCZ)993261266790004120240202i20122020 uu engur|||||||||||txtrdacontentcrdamediacrrdacarrierStrain-Engineered MOSFETsC. K. Maiti, T. K. MaitiBoca Raton :CRC Press,2012.1 online resource (1 p.)9781138075603 This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization.Technology & Engineering / Electronics / MicroelectronicsbisacshTechnologyTechnology & Engineering / Electronics / MicroelectronicsTechnology.Maiti C. K866187Maiti T. KScCtBLLScCtBLL9910870868603321Strain-Engineered MOSFETs4191418UNINA