Characterization of 4H <000-1> silicon carbide films grown by solvent-laser heated floating zone / / Andrew A. Woodworth [and four others]

• Autore: Woodworth Andrew A.
• Pubblicazione: Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , 2012
• Descrizione fisica: 1 online resource (6 pages) : illustrations
• Soggetto topico: Silicon carbides; Single crystals; Crystal growth; Laser heating; X ray diffraction; Diffraction patterns
• Note generali: Title from title screen (viewed on Aug. 21, 2014).; "September 2012."; "Prepared for the 2012 Spring Meeting and Exhibit sponsored by the Materials Research Society, San Francisco, California, April 9-13, 2012."
• Nota di bibliografia: Includes bibliographical references (page 6).
• Titolo autorizzato: Characterization of 4H silicon carbide films grown by solvent-laser heated floating zone
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910702487203321
• Lo trovi qui: Univ. Federico II