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Record Nr. |
UNINA9910702487203321 |
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Autore |
Woodworth Andrew A. |
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Titolo |
Characterization of 4H <000-1> silicon carbide films grown by solvent-laser heated floating zone / / Andrew A. Woodworth [and four others] |
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Pubbl/distr/stampa |
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Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , 2012 |
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Descrizione fisica |
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1 online resource (6 pages) : illustrations |
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Collana |
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Soggetti |
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Silicon carbides |
Single crystals |
Crystal growth |
Laser heating |
X ray diffraction |
Diffraction patterns |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Title from title screen (viewed on Aug. 21, 2014). |
"September 2012." |
"Prepared for the 2012 Spring Meeting and Exhibit sponsored by the Materials Research Society, San Francisco, California, April 9-13, 2012." |
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Nota di bibliografia |
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Includes bibliographical references (page 6). |
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