01917nam 2200505I 450 991070248720332120140821162911.0(CKB)5470000002427293(OCoLC)888238118(EXLCZ)99547000000242729320140821d2012 ua 0engurmn|||||||||txtrdacontentcrdamediacrrdacarrierCharacterization of 4H <000-1> silicon carbide films grown by solvent-laser heated floating zone /Andrew A. Woodworth [and four others]Cleveland, Ohio :National Aeronautics and Space Administration, Glenn Research Center,2012.1 online resource (6 pages) illustrationsNASA/TM ;2012-217708Title from title screen (viewed on Aug. 21, 2014)."September 2012.""Prepared for the 2012 Spring Meeting and Exhibit sponsored by the Materials Research Society, San Francisco, California, April 9-13, 2012."Includes bibliographical references (page 6).Silicon carbidesnasatSingle crystalsnasatCrystal growthnasatLaser heatingnasatX ray diffractionnasatDiffraction patternsnasatSilicon carbides.Single crystals.Crystal growth.Laser heating.X ray diffraction.Diffraction patterns.Woodworth Andrew A.1412048NASA Glenn Research Center,United States.National Aeronautics and Space Administration,GPOGPOBOOK9910702487203321Characterization of 4H silicon carbide films grown by solvent-laser heated floating zone3504611UNINA