LEADER 01917nam  2200505I  450 
001 9910702487203321
005 20140821162911.0
035   $a(CKB)5470000002427293
035   $a(OCoLC)888238118
035   $a(EXLCZ)995470000002427293
100   $a20140821d2012      ua             0
101 0 $aeng
135   $aurmn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aCharacterization of 4H <000-1> silicon carbide films grown by solvent-laser heated floating zone /$fAndrew A. Woodworth [and four others]
210  1$aCleveland, Ohio :$cNational Aeronautics and Space Administration, Glenn Research Center,$d2012.
215   $a1 online resource (6 pages) $cillustrations
225 1 $aNASA/TM ;$v2012-217708
300   $aTitle from title screen (viewed on Aug. 21, 2014).
300   $a"September 2012."
300   $a"Prepared for the 2012 Spring Meeting and Exhibit sponsored by the Materials Research Society, San Francisco, California, April 9-13, 2012."
320   $aIncludes bibliographical references (page 6).
606   $aSilicon carbides$2nasat
606   $aSingle crystals$2nasat
606   $aCrystal growth$2nasat
606   $aLaser heating$2nasat
606   $aX ray diffraction$2nasat
606   $aDiffraction patterns$2nasat
615  7$aSilicon carbides.
615  7$aSingle crystals.
615  7$aCrystal growth.
615  7$aLaser heating.
615  7$aX ray diffraction.
615  7$aDiffraction patterns.
700   $aWoodworth$b Andrew A.$01412048
712 02$aNASA Glenn Research Center,
712 02$aUnited States.$bNational Aeronautics and Space Administration,
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910702487203321
996   $aCharacterization of 4H silicon carbide films grown by solvent-laser heated floating zone$93504611
997   $aUNINA