LEADER 01358nam2-2200421---450- 001 990000563760203316 005 20090313095553.0 010 $a88-13-16867-5 035 $a0056376 035 $aUSA010056376 035 $a(ALEPH)000056376USA01 035 $a0056376 100 $a20010713d1990----km-y0itay0103----ba 101 $aita 102 $aIT 105 $a||||||||001yy 200 1 $a<<1.:>><> processi del 1475$fAnna Esposito, Diego Quaglioni$v1 210 $aPadova$cCEDAM$d1990 215 $aXI, 499 p.$d24 cm 225 $aDipartimento di scienze giuridiche$fUniversità di Trento$v8 410 $12001$aDipartimento di scienze giuridiche$fUniversità di Trento8$v8 461 1$10010056374$12001$aProcessi contro gli ebrei di Trento, (1475-1478) 606 0 $aEbreo$xProcesso$yTrento$z1475-1478 676 $a305.8924 700 1$aESPOSITO,$bAnna$042742 701 1$aQUAGLIONI,$bDiego$0183637 801 0$aIT$bsalbc$gISBD 912 $a990000563760203316 951 $aX 43 II 8/1$b68734 EC$cX 43 II 959 $aBK 969 $aGIU 979 $aPATTY$b90$c20010713$lUSA01$h1234 979 $aPATTY$b90$c20010713$lUSA01$h1238 979 $c20020403$lUSA01$h1705 979 $aPATRY$b90$c20040406$lUSA01$h1639 979 $aCHIARA$b90$c20090313$lUSA01$h0955 996 $aProcessi del 1475$9884845 997 $aUNISA LEADER 01917nam 2200505I 450 001 9910702487203321 005 20140821162911.0 035 $a(CKB)5470000002427293 035 $a(OCoLC)888238118 035 $a(EXLCZ)995470000002427293 100 $a20140821d2012 ua 0 101 0 $aeng 135 $aurmn||||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aCharacterization of 4H <000-1> silicon carbide films grown by solvent-laser heated floating zone /$fAndrew A. Woodworth [and four others] 210 1$aCleveland, Ohio :$cNational Aeronautics and Space Administration, Glenn Research Center,$d2012. 215 $a1 online resource (6 pages) $cillustrations 225 1 $aNASA/TM ;$v2012-217708 300 $aTitle from title screen (viewed on Aug. 21, 2014). 300 $a"September 2012." 300 $a"Prepared for the 2012 Spring Meeting and Exhibit sponsored by the Materials Research Society, San Francisco, California, April 9-13, 2012." 320 $aIncludes bibliographical references (page 6). 606 $aSilicon carbides$2nasat 606 $aSingle crystals$2nasat 606 $aCrystal growth$2nasat 606 $aLaser heating$2nasat 606 $aX ray diffraction$2nasat 606 $aDiffraction patterns$2nasat 615 7$aSilicon carbides. 615 7$aSingle crystals. 615 7$aCrystal growth. 615 7$aLaser heating. 615 7$aX ray diffraction. 615 7$aDiffraction patterns. 700 $aWoodworth$b Andrew A.$01412048 712 02$aNASA Glenn Research Center, 712 02$aUnited States.$bNational Aeronautics and Space Administration, 801 0$bGPO 801 1$bGPO 906 $aBOOK 912 $a9910702487203321 996 $aCharacterization of 4H silicon carbide films grown by solvent-laser heated floating zone$93504611 997 $aUNINA