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Charge and Spin Transport in Disordered Graphene-Based Materials / / by Dinh Van Tuan



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Autore: Van Tuan Dinh Visualizza persona
Titolo: Charge and Spin Transport in Disordered Graphene-Based Materials / / by Dinh Van Tuan Visualizza cluster
Pubblicazione: Cham : , : Springer International Publishing : , : Imprint : Springer, , 2016
Edizione: 1st ed. 2016.
Descrizione fisica: 1 online resource (162 p.)
Disciplina: 546.681
Soggetto topico: Nanoscale science
Nanoscience
Nanostructures
Optical materials
Electronic materials
Materials—Surfaces
Thin films
Nanoscale Science and Technology
Optical and Electronic Materials
Surfaces and Interfaces, Thin Films
Note generali: "Doctoral Thesis accepted by Autonomous University of Barcelona, Spain."
Nota di bibliografia: Includes bibliographical references at the end of each chapters.
Nota di contenuto: Introduction -- Electronic and Transport Properties of Graphene -- The Real Space Order O(N) Transport Formalism -- Transport in Disordered Graphene -- Spin Transport in Disordered Graphene -- Conclusions.
Sommario/riassunto: This thesis presents an in-depth theoretical analysis of charge and spin transport properties in complex forms of disordered graphene. It relies on innovative real space computational methods of the time-dependent spreading of electronic wave packets. First a universal scaling law of the elastic mean free path versus the average grain size is predicted for polycrystalline morphologies, and charge mobilities of up to 300.000 cm2/V.s are determined for 1 micron grain size, while amorphous graphene membranes are shown to behave as Anderson insulators. An unprecedented spin relaxation mechanism, unique to graphene and driven by spin/pseudospin entanglement is then reported in the presence of weak spin-orbit interaction (gold ad-atom impurities) together with the prediction of a crossover from a quantum spin Hall Effect to spin Hall effect (for thallium ad-atoms), depending on the degree of surface ad-atom segregation and the resulting island diameter.
Titolo autorizzato: Charge and Spin Transport in Disordered Graphene-Based Materials  Visualizza cluster
ISBN: 3-319-25571-1
Formato: Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione: Inglese
Record Nr.: 9910254610003321
Lo trovi qui: Univ. Federico II
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Serie: Springer Theses, Recognizing Outstanding Ph.D. Research, . 2190-5053