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Autore: |
Van Tuan Dinh
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Titolo: |
Charge and Spin Transport in Disordered Graphene-Based Materials / / by Dinh Van Tuan
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Pubblicazione: | Cham : , : Springer International Publishing : , : Imprint : Springer, , 2016 |
Edizione: | 1st ed. 2016. |
Descrizione fisica: | 1 online resource (162 p.) |
Disciplina: | 546.681 |
Soggetto topico: | Nanoscale science |
Nanoscience | |
Nanostructures | |
Optical materials | |
Electronic materials | |
Materials—Surfaces | |
Thin films | |
Nanoscale Science and Technology | |
Optical and Electronic Materials | |
Surfaces and Interfaces, Thin Films | |
Note generali: | "Doctoral Thesis accepted by Autonomous University of Barcelona, Spain." |
Nota di bibliografia: | Includes bibliographical references at the end of each chapters. |
Nota di contenuto: | Introduction -- Electronic and Transport Properties of Graphene -- The Real Space Order O(N) Transport Formalism -- Transport in Disordered Graphene -- Spin Transport in Disordered Graphene -- Conclusions. |
Sommario/riassunto: | This thesis presents an in-depth theoretical analysis of charge and spin transport properties in complex forms of disordered graphene. It relies on innovative real space computational methods of the time-dependent spreading of electronic wave packets. First a universal scaling law of the elastic mean free path versus the average grain size is predicted for polycrystalline morphologies, and charge mobilities of up to 300.000 cm2/V.s are determined for 1 micron grain size, while amorphous graphene membranes are shown to behave as Anderson insulators. An unprecedented spin relaxation mechanism, unique to graphene and driven by spin/pseudospin entanglement is then reported in the presence of weak spin-orbit interaction (gold ad-atom impurities) together with the prediction of a crossover from a quantum spin Hall Effect to spin Hall effect (for thallium ad-atoms), depending on the degree of surface ad-atom segregation and the resulting island diameter. |
Titolo autorizzato: | Charge and Spin Transport in Disordered Graphene-Based Materials ![]() |
ISBN: | 3-319-25571-1 |
Formato: | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione: | Inglese |
Record Nr.: | 9910254610003321 |
Lo trovi qui: | Univ. Federico II |
Opac: | Controlla la disponibilità qui |