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[null,"1.","Record Nr.",null,"UNINA9910254610003321"]
[null,null,"Autore",null,"Van Tuan Dinh"]
[null,null,"Titolo",null,"Charge and Spin Transport in Disordered Graphene-Based Materials / / by Dinh Van Tuan"]
[null,null,"Pubbl/distr/stampa",null,"Cham : , : Springer International Publishing : , : Imprint : Springer, , 2016"]
[null,null,"ISBN",null,"3-319-25571-1"]
[null,null,"Edizione",null,"[1st ed. 2016.]"]
[null,null,"Descrizione fisica",null,"1 online resource (162 p.)"]
[null,null,"Collana",null,"Springer Theses, Recognizing Outstanding Ph.D. Research, , 2190-5053"]
[null,null,"Disciplina",null,"546.681"]
[null,null,"Soggetti",null,"Nanoscience"]
[{"$nulls":4},"Nanostructures"]
[{"$nulls":4},"Optical materials"]
[{"$nulls":4},"Electronics - Materials"]
[{"$nulls":4},"Materials—Surfaces"]
[{"$nulls":4},"Thin films"]
[{"$nulls":4},"Nanoscale Science and Technology"]
[{"$nulls":4},"Optical and Electronic Materials"]
[{"$nulls":4},"Surfaces and Interfaces, Thin Films"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","\"Doctoral Thesis accepted by Autonomous University of Barcelona, Spain.\""]
[null,null,null,"Nota di bibliografia","Includes bibliographical references at the end of each chapters."]
[null,null,"Nota di contenuto",null,"Introduction -- Electronic and Transport Properties of Graphene -- The Real Space Order O(N) Transport Formalism -- Transport in Disordered Graphene -- Spin Transport in Disordered Graphene -- Conclusions."]
[null,null,null,"Sommario/riassunto","This thesis presents an in-depth theoretical analysis of charge and spin transport properties in complex forms of disordered graphene. It relies on innovative real space computational methods of the time-dependent spreading of electronic wave packets. First a universal scaling law of the elastic mean free path versus the average grain size is predicted for polycrystalline morphologies, and charge mobilities of up to 300.000 cm2/V.s are determined for 1 micron grain size, while amorphous graphene membranes are shown to behave as Anderson insulators. An unprecedented spin relaxation mechanism, unique to graphene and driven by spin/pseudospin entanglement is then reported in the presence of weak spin-orbit interaction (gold ad-atom impurities) together with the prediction of a crossover from a quantum spin Hall "]
[{"$nulls":4},"Effect to spin Hall effect (for thallium ad-atoms), depending on the degree of surface ad-atom segregation and the resulting island diameter."]