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Record Nr. |
UNINA9910254610003321 |
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Autore |
Van Tuan Dinh |
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Titolo |
Charge and Spin Transport in Disordered Graphene-Based Materials / / by Dinh Van Tuan |
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Pubbl/distr/stampa |
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Cham : , : Springer International Publishing : , : Imprint : Springer, , 2016 |
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ISBN |
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Edizione |
[1st ed. 2016.] |
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Descrizione fisica |
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1 online resource (162 p.) |
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Collana |
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Springer Theses, Recognizing Outstanding Ph.D. Research, , 2190-5053 |
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Disciplina |
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Soggetti |
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Nanoscale science |
Nanoscience |
Nanostructures |
Optical materials |
Electronic materials |
Materials—Surfaces |
Thin films |
Nanoscale Science and Technology |
Optical and Electronic Materials |
Surfaces and Interfaces, Thin Films |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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"Doctoral Thesis accepted by Autonomous University of Barcelona, Spain." |
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Nota di bibliografia |
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Includes bibliographical references at the end of each chapters. |
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Nota di contenuto |
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Introduction -- Electronic and Transport Properties of Graphene -- The Real Space Order O(N) Transport Formalism -- Transport in Disordered Graphene -- Spin Transport in Disordered Graphene -- Conclusions. |
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Sommario/riassunto |
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This thesis presents an in-depth theoretical analysis of charge and spin transport properties in complex forms of disordered graphene. It relies on innovative real space computational methods of the time-dependent spreading of electronic wave packets. First a universal scaling law of the elastic mean free path versus the average grain size is predicted for polycrystalline morphologies, and charge mobilities of up to 300.000 cm2/V.s are determined for 1 micron grain size, while amorphous graphene membranes are shown to behave as Anderson insulators. An |
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