MOSFET technologies for double-pole four-throw radio-frequency switch / / Viranjay M. Srivastava, Ghanshyam Singh
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| Autore: |
Srivastava Viranjay M
|
| Titolo: |
MOSFET technologies for double-pole four-throw radio-frequency switch / / Viranjay M. Srivastava, Ghanshyam Singh
|
| Pubblicazione: | Cham [Switzerland] : , : Springer, , 2014 |
| Edizione: | 1st ed. 2014. |
| Descrizione fisica: | 1 online resource (xv, 199 pages) : illustrations (some color) |
| Disciplina: | 621.3815 |
| Soggetto topico: | Metal oxide semiconductor field-effect transistors |
| Persona (resp. second.): | SinghGhanshyam |
| Note generali: | Description based upon print version of record. |
| Nota di bibliografia: | Includes bibliographical references and index. |
| Nota di contenuto: | Introduction -- Design of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET -- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET -- Cylindrical Surrounding Double-Gate RF MOSFET -- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch -- Testing of MOSFET Surfaces Using Image Acquisition -- Conclusions and Future Scope. |
| Sommario/riassunto: | This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition. · Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; · Explains the design of RF switches using the technologies presented and simulates switches; · Verifies parameters and discusses feasibility of devices and switches. |
| Titolo autorizzato: | MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch |
| ISBN: | 3-319-01165-0 |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910299471403321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |
Serie:
Analog circuits and signal processing series.