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[null,"1.","Record Nr.",null,"UNINA9910299471403321"]
[null,null,"Autore",null,"Srivastava Viranjay M"]
[null,null,"Titolo",null,"MOSFET technologies for double-pole four-throw radio-frequency switch / / Viranjay M. Srivastava, Ghanshyam Singh"]
[null,null,"Pubbl/distr/stampa",null,"Cham [Switzerland] : , : Springer, , 2014"]
[null,null,"ISBN",null,"3-319-01165-0"]
[null,null,"Edizione",null,"[1st ed. 2014.]"]
[null,null,"Descrizione fisica",null,"1 online resource (xv, 199 pages) : illustrations (some color)"]
[null,null,"Collana",null,"Analog Circuits and Signal Processing, , 1872-082X ; ; 122"]
[null,null,"Disciplina",null,"621.3815"]
[null,null,"Soggetti",null,"Metal oxide semiconductor field-effect transistors"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","Description based upon print version of record."]
[null,null,null,"Nota di bibliografia","Includes bibliographical references and index."]
[null,null,"Nota di contenuto",null,"Introduction -- Design of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET -- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET -- Cylindrical Surrounding Double-Gate RF MOSFET -- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch -- Testing of MOSFET Surfaces Using Image Acquisition -- Conclusions and Future Scope."]
[null,null,null,"Sommario/riassunto","This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET.  The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET  is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.  ·         Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; ·         Explains the design of RF switches using the technologies presented and simulates switches; ·         Verifies parameters and discusses feasibility of devices and switches."]