LEADER 02937oam 2200445 450 001 9910299471403321 005 20190911112725.0 010 $a3-319-01165-0 024 7 $a10.1007/978-3-319-01165-3 035 $a(OCoLC)862223406 035 $a(MiFhGG)GVRL6XXA 035 $a(EXLCZ)993710000000025639 100 $a20130730d2014 uy 0 101 0 $aeng 135 $aurun|---uuuua 181 $ctxt 182 $cc 183 $acr 200 10$aMOSFET technologies for double-pole four-throw radio-frequency switch /$fViranjay M. Srivastava, Ghanshyam Singh 205 $a1st ed. 2014. 210 1$aCham [Switzerland] :$cSpringer,$d2014. 215 $a1 online resource (xv, 199 pages) $cillustrations (some color) 225 1 $aAnalog Circuits and Signal Processing,$x1872-082X ;$v122 300 $aDescription based upon print version of record. 311 $a3-319-01164-2 320 $aIncludes bibliographical references and index. 327 $aIntroduction -- Design of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET -- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET -- Cylindrical Surrounding Double-Gate RF MOSFET -- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch -- Testing of MOSFET Surfaces Using Image Acquisition -- Conclusions and Future Scope. 330 $aThis book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET.  The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET  is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.  ·         Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; ·         Explains the design of RF switches using the technologies presented and simulates switches; ·         Verifies parameters and discusses feasibility of devices and switches. 410 0$aAnalog circuits and signal processing series. 606 $aMetal oxide semiconductor field-effect transistors 615 0$aMetal oxide semiconductor field-effect transistors. 676 $a621.3815 700 $aSrivastava$b Viranjay M$4aut$4http://id.loc.gov/vocabulary/relators/aut$0871299 702 $aSingh$b Ghanshyam 801 0$bMiFhGG 801 1$bMiFhGG 906 $aBOOK 912 $a9910299471403321 996 $aMOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch$91945045 997 $aUNINA