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Record Nr. |
UNINA9910299471403321 |
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Autore |
Srivastava Viranjay M |
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Titolo |
MOSFET technologies for double-pole four-throw radio-frequency switch / / Viranjay M. Srivastava, Ghanshyam Singh |
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Pubbl/distr/stampa |
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Cham [Switzerland] : , : Springer, , 2014 |
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ISBN |
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Edizione |
[1st ed. 2014.] |
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Descrizione fisica |
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1 online resource (xv, 199 pages) : illustrations (some color) |
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Collana |
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Analog Circuits and Signal Processing, , 1872-082X ; ; 122 |
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Disciplina |
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Soggetti |
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Metal oxide semiconductor field-effect transistors |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Introduction -- Design of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET -- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET -- Cylindrical Surrounding Double-Gate RF MOSFET -- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch -- Testing of MOSFET Surfaces Using Image Acquisition -- Conclusions and Future Scope. |
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Sommario/riassunto |
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This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition. · Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; · Explains the design of RF switches using the technologies presented and simulates switches; · Verifies parameters and discusses feasibility of devices and switches. |
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