Fast risetime reverse bias pulse failures in SiC PN junction diodes / / Philip G. Nuedeck, Christian Faziz, James D. Parsons
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| Autore: |
Nuedeck Philip G.
|
| Titolo: |
Fast risetime reverse bias pulse failures in SiC PN junction diodes / / Philip G. Nuedeck, Christian Faziz, James D. Parsons
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| Pubblicazione: | Cleveland, Ohio : , : National Aeronautics and Space Administration, Lewis Research Center, , June 1996 |
| Descrizione fisica: | 1 online resource (6 pages) : illustrations |
| Soggetto topico: | P-n junctions |
| Semiconductors (materials) | |
| Silicon carbides | |
| High temperature environments | |
| Bias | |
| Doped crystals | |
| Energy gaps (solid state) | |
| Persona (resp. second.): | FazizChristian |
| ParsonsJames D. | |
| Note generali: | Title from title screen (viewed July 12, 2016). |
| "June 1996"--Report documentation page. | |
| "Prepared for the Third International High Temperature Electronics Conference sponsored by the Sandia National Laboratories, Albuquerque, New Mexico, June 9-14, 1996." | |
| "Performing organization: National Aeronautics and Space Administration, Lewis Research Center"--Report documentation page. | |
| Nota di bibliografia: | Includes bibliographical references (page 6). |
| Titolo autorizzato: | Fast risetime reverse bias pulse failures in SiC PN junction diodes |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910707379203321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |