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Record Nr. |
UNINA9910707379203321 |
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Autore |
Nuedeck Philip G. |
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Titolo |
Fast risetime reverse bias pulse failures in SiC PN junction diodes / / Philip G. Nuedeck, Christian Faziz, James D. Parsons |
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Pubbl/distr/stampa |
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Cleveland, Ohio : , : National Aeronautics and Space Administration, Lewis Research Center, , June 1996 |
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Descrizione fisica |
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1 online resource (6 pages) : illustrations |
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Collana |
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NASA technical memorandum ; ; 107256 |
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Soggetti |
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P-n junctions |
Semiconductors (materials) |
Silicon carbides |
High temperature environments |
Bias |
Doped crystals |
Energy gaps (solid state) |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Title from title screen (viewed July 12, 2016). |
"June 1996"--Report documentation page. |
"Prepared for the Third International High Temperature Electronics Conference sponsored by the Sandia National Laboratories, Albuquerque, New Mexico, June 9-14, 1996." |
"Performing organization: National Aeronautics and Space Administration, Lewis Research Center"--Report documentation page. |
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Nota di bibliografia |
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Includes bibliographical references (page 6). |
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