02252nam 2200565I 450 991070737920332120160712144624.0(CKB)5470000002463723(OCoLC)953458792(EXLCZ)99547000000246372320160712j199606 ua 0engurbn|||||||||txtrdacontentcrdamediacrrdacarrierFast risetime reverse bias pulse failures in SiC PN junction diodes /Philip G. Nuedeck, Christian Faziz, James D. ParsonsCleveland, Ohio :National Aeronautics and Space Administration, Lewis Research Center,June 1996.1 online resource (6 pages) illustrationsNASA technical memorandum ;107256Title from title screen (viewed July 12, 2016)."June 1996"--Report documentation page."Prepared for the Third International High Temperature Electronics Conference sponsored by the Sandia National Laboratories, Albuquerque, New Mexico, June 9-14, 1996.""Performing organization: National Aeronautics and Space Administration, Lewis Research Center"--Report documentation page.Includes bibliographical references (page 6).P-n junctionsnasatSemiconductors (materials)nasatSilicon carbidesnasatHigh temperature environmentsnasatBiasnasatDoped crystalsnasatEnergy gaps (solid state)nasatP-n junctions.Semiconductors (materials)Silicon carbides.High temperature environments.Bias.Doped crystals.Energy gaps (solid state)Nuedeck Philip G.1406765Faziz ChristianParsons James D.Lewis Research Center,United States.National Aeronautics and Space Administration,GPOGPOBOOK9910707379203321Fast risetime reverse bias pulse failures in SiC PN junction diodes3486463UNINA