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001 9910707379203321
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035   $a(CKB)5470000002463723
035   $a(OCoLC)953458792
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100   $a20160712j199606    ua             0
101 0 $aeng
135   $aurbn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aFast risetime reverse bias pulse failures in SiC PN junction diodes /$fPhilip G. Nuedeck, Christian Faziz, James D. Parsons
210  1$aCleveland, Ohio :$cNational Aeronautics and Space Administration, Lewis Research Center,$dJune 1996.
215   $a1 online resource (6 pages) $cillustrations
225 1 $aNASA technical memorandum ;$v107256
300   $aTitle from title screen (viewed July 12, 2016).
300   $a"June 1996"--Report documentation page.
300   $a"Prepared for the Third International High Temperature Electronics Conference sponsored by the Sandia National Laboratories, Albuquerque, New Mexico, June 9-14, 1996."
300   $a"Performing organization: National Aeronautics and Space Administration, Lewis Research Center"--Report documentation page.
320   $aIncludes bibliographical references (page 6).
606   $aP-n junctions$2nasat
606   $aSemiconductors (materials)$2nasat
606   $aSilicon carbides$2nasat
606   $aHigh temperature environments$2nasat
606   $aBias$2nasat
606   $aDoped crystals$2nasat
606   $aEnergy gaps (solid state)$2nasat
615  7$aP-n junctions.
615  7$aSemiconductors (materials)
615  7$aSilicon carbides.
615  7$aHigh temperature environments.
615  7$aBias.
615  7$aDoped crystals.
615  7$aEnergy gaps (solid state)
700   $aNuedeck$b Philip G.$01406765
702   $aFaziz$b Christian
702   $aParsons$b James D.
712 02$aLewis Research Center,
712 02$aUnited States.$bNational Aeronautics and Space Administration,
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910707379203321
996   $aFast risetime reverse bias pulse failures in SiC PN junction diodes$93486463
997   $aUNINA