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Autore: |
Knoch Joachim
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Titolo: |
Nanoelectronics : device physics, fabrication, simulation / / Joachim Knoch
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Pubblicazione: | Berlin, Germany ; ; Boston, Massachusetts : , : De Gruyter, , [2020] |
©2020 | |
Descrizione fisica: | 1 online resource (XVI, 390 p.) |
Disciplina: | 621.381 |
Soggetto topico: | Nanoelectronics |
Soggetto non controllato: | Field Effect Transistors |
Metal-Oxide Semiconductor | |
Nanoelectronic Devices | |
Semiconductor | |
Transistors | |
Two-Dimensional Materials | |
Classificazione: | UK 8300 |
Nota di bibliografia: | Includes bibliographical references and index. |
Nota di contenuto: | Frontmatter -- Preface -- How to Use the Book -- Contents -- 1 Introduction -- 2 Solid-State Physics Foundation -- 3 Semiconductor Fabrication -- 4 Basic Ingredients for Nanoelectronics Devices -- 5 Metal–Oxide–Semiconductor Field-Effect Transistors -- 6 Device Simulation -- 7 Metal–Source–Drain Field-Effect Transistors -- 8 Carbon Nanotube Field-Effect Transistors -- 9 Steep Slope Transistors -- 10 Device Based on Two-Dimensional Materials -- A Color Map for 2D Materials -- Bibliography -- Index |
Sommario/riassunto: | The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well. |
Titolo autorizzato: | Nanoelectronics ![]() |
ISBN: | 3-11-057550-7 |
Formato: | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione: | Inglese |
Record Nr.: | 9910554227103321 |
Lo trovi qui: | Univ. Federico II |
Opac: | Controlla la disponibilità qui |