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[null,"1.","Record Nr.",null,"UNINA9910554227103321"]
[null,null,"Autore",null,"Knoch Joachim"]
[null,null,"Titolo",null,"Nanoelectronics : device physics, fabrication, simulation / / Joachim Knoch"]
[null,null,"Pubbl/distr/stampa",null,"Berlin, Germany ; ; Boston, Massachusetts : , : De Gruyter, , [2020]"]
[{"$nulls":4},"©2020"]
[null,null,"ISBN",null,"3-11-057550-7"]
[null,null,"Descrizione fisica",null,"1 online resource (XVI, 390 p.)"]
[null,null,"Collana",null,"De Gruyter Textbook"]
[null,null,"Classificazione",null,"UK 8300"]
[null,null,"Disciplina",null,"621.381"]
[null,null,"Soggetti",null,"Nanoelectronics"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Nota di bibliografia","Includes bibliographical references and index."]
[null,null,"Nota di contenuto",null,"Frontmatter -- Preface -- How to Use the Book -- Contents -- 1 Introduction -- 2 Solid-State Physics Foundation -- 3 Semiconductor Fabrication -- 4 Basic Ingredients for Nanoelectronics Devices -- 5 Metal–Oxide–Semiconductor Field-Effect Transistors -- 6 Device Simulation -- 7 Metal–Source–Drain Field-Effect Transistors -- 8 Carbon Nanotube Field-Effect Transistors -- 9 Steep Slope Transistors -- 10 Device Based on Two-Dimensional Materials -- A Color Map for 2D Materials -- Bibliography -- Index"]
[null,null,null,"Sommario/riassunto","The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well."]