02600nam 2200565 450 991055422710332120231110213539.03-11-057550-710.1515/9783110575507(CKB)4100000011625798(DE-B1597)489444(DE-B1597)9783110575507(OCoLC)1226678548(MiAaPQ)EBC6702208(Au-PeEL)EBL6702208(EXLCZ)99410000001162579820220430d2020 uy 0engur|||||||||||txtrdacontentcrdamediacrrdacarrierNanoelectronics device physics, fabrication, simulation /Joachim KnochBerlin, Germany ;Boston, Massachusetts :De Gruyter,[2020]©20201 online resource (XVI, 390 p.)De Gruyter Textbook3-11-057421-7 Includes bibliographical references and index.Frontmatter -- Preface -- How to Use the Book -- Contents -- 1 Introduction -- 2 Solid-State Physics Foundation -- 3 Semiconductor Fabrication -- 4 Basic Ingredients for Nanoelectronics Devices -- 5 Metal–Oxide–Semiconductor Field-Effect Transistors -- 6 Device Simulation -- 7 Metal–Source–Drain Field-Effect Transistors -- 8 Carbon Nanotube Field-Effect Transistors -- 9 Steep Slope Transistors -- 10 Device Based on Two-Dimensional Materials -- A Color Map for 2D Materials -- Bibliography -- IndexThe author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well. De Gruyter Textbook NanoelectronicsField Effect Transistors.Metal-Oxide Semiconductor.Nanoelectronic Devices.Semiconductor.Transistors.Two-Dimensional Materials.Nanoelectronics.621.381UK 8300rvkKnoch Joachim1219064MiAaPQMiAaPQMiAaPQBOOK9910554227103321Nanoelectronics2819015UNINA