Nanowire Field-Effect Transistor (FET)

• Autore: García-Loureiro Antonio
• Pubblicazione: Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
• Descrizione fisica: 1 electronic resource (96 p.)
• Soggetto topico: History of engineering & technology
• Soggetto non controllato: random dopant; drift-diffusion; variability; device simulation; nanodevice; screening; Coulomb interaction; III-V; TASE; MOSFETs; Integration; nanowire field-effect transistors; silicon nanomaterials; charge transport; one-dimensional multi-subband scattering models; Kubo–Greenwood formalism; schrödinger-poisson solvers; DC and AC characteristic fluctuations; gate-all-around; nanowire; work function fluctuation; aspect ratio of channel cross-section; timing fluctuation; noise margin fluctuation; power fluctuation; CMOS circuit; statistical device simulation; variability effects; Monte Carlo; Schrödinger based quantum corrections; quantum modeling; nonequilibrium Green’s function; nanowire transistor; electron–phonon interaction; phonon–phonon interaction; self-consistent Born approximation; lowest order approximation; Padé approximants; Richardson extrapolation; ZnO; field effect transistor; conduction mechanism; metal gate; material properties; fabrication; modelling; nanojunction; constriction; quantum electron transport; quantum confinement; dimensionality reduction; stochastic Schrödinger equations; geometric correlations; silicon nanowires; nano-transistors; quantum transport; hot electrons; self-cooling; nano-cooling; thermoelectricity; heat equation; non-equilibrium Green functions; power dissipation
• Persona (resp. second.): KalnaKarol; SeoaneNatalia; García-LoureiroAntonio
• Sommario/riassunto: In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.
• Altri titoli varianti: Nanowire Field-Effect Transistor
• Titolo autorizzato: Nanowire Field-Effect Transistor (FET)
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910557553303321
• Lo trovi qui: Univ. Federico II