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Titolo: |
2000 International Symposium on High Performance Electron Devices for Microwave, Optoelectronic Applications
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Pubblicazione: | [Place of publication not identified], : I E E E, 2000 |
Descrizione fisica: | 1 online resource |
Disciplina: | 621.381045 |
Soggetto topico: | Optoelectronics |
Note generali: | Bibliographic Level Mode of Issuance: Monograph |
Nota di contenuto: | Advances in III-V transistors (HEMTs and HBTs) for mm-wave applications; High speed laser diodes, optical modulators and photodetectors; Si and SiGe based devices for RF and optoelectronics applications; Modelling of microwave and optoelectronic devices; Wide bandgap devices for microwave and optoelectronic applications; Novel material (semiconductor/polymer/amorphous) optoelectronic and microwave devices; Low distortion microwave devices for efficient mixer and power amplifier applications; Optical control of microwave and mm-wave devices; Microwave and optoelectronic photonic crystal devices; Components for fibre radio applications. |
Sommario/riassunto: | These conference proceedings examine such topics as: advances in III-V transistors (HEMTs and HBTs) for mm-wave applications; high speed laser diodes, optical modulators and photodetectors; and microwave and optoelectronic photonic crystal devices. |
Titolo autorizzato: | 2000 International Symposium on High Performance Electron Devices for Microwave, Optoelectronic Applications ![]() |
Formato: | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione: | Inglese |
Record Nr.: | 996217258703316 |
Lo trovi qui: | Univ. di Salerno |
Opac: | Controlla la disponibilità qui |